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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
FOUR DIGIT LED DISPLAY (0.3 Inch)
LFD3A5/64/R1-XX
DATA SHEET
DOC. NO REV. DATE :
:
QW0905- LFD3A5/64/R1-XX A
: 23 - Nov. - 2005
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD3A5/64/R1-XX Page 1/7
Package Dimensions
30.4(1.197")
7.0 (0.276")
DIG.1
7.6 (0.3")
DIG.2 DP5
DIG.3
DIG.4 DP8 DP9
13.2 (0.52") 10.0 (0.394")
DP1 DP2 DP3 DP4
DP6
DP7
DP10
A
LFD3A5/64/R1-XX LIGITEK
FG E D
B C DP
0.45 TYP
2.54X9=22.86 (0.9")
6.00.5
Note : 1.All dimension are in millimeters and (lnch) tolerance is 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD3A5/64/R1-XX Page 2/7
Internal Circuit Diagram
LFD3A54/R1-XX
LFD3A64/R1-XX
17 19 20 3 11 18 22 12
A DIG.2 B C 5 D E F G DP6
17 19 20 3 11 18 22 12
A DIG.2 B C 5 D E F G DP6
6
6
A DIG.3 B C 8 D E F G
A DIG.3 B C 8 D E F G
9
DP7
16
9
DP7
16
A DIG.4 B C 10 D E F G
A DIG.4 B C 10 D E F G
1,2,4,7,13,14,15,21,23,24 NOPIN
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD3A5/64/R1-XX Page 3/7
Electrical Connection
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 NO PIN NO PIN Anode D NO PIN Commom Cathode Dig.2 Cathode DP5,DP6 NO PIN Common Cathode Dig.3 Anode DP7 Common Cathode Dig.4 Anode (Dig.2,Dig.3,Dig.4) E Anode DP6 NO PIN NO PIN NO PIN Cathode DP7 Anode A Anode F Anode B Anode C NO PIN Anode G NO PIN NO PIN LFD3A54/R1-XX PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 NO PIN NO PIN Cathode D NO PIN Commom Anode Dig2 Anode DP5 NO PIN Common Anode Dig.3 Cathode DP7 Common Anode Dig.4 Cathode (Dig.2,Dig.3,Dig.4) E Cathode DP6 NO PIN NO PIN NO PIN Cathode DP7 Cathode A Cathode F Cathode B Cathode C NO PIN Cathode G NO PIN NO PIN LFD3A64/R1-XX
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD3A5/64/R1-XX Page 4/7
Absolute Maximum Ratings at Ta=25
Ratings Parameter Symbol E Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Operating Temperature Storage Temperature IF 30 120 mA UNIT
IFP
mA
PD Ir Topr Tstg
100 10 -25 ~ +85 -25 ~ +85
mW
A
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260
Part Selection And Application Information(Ratings at 25)
Electrical Vf(v) Iv(mcd) Min. Typ. Max. Min. Typ.
PART NO
Common Cathode or Anode Material Emitted CHIP
Common Cathode
GaAsP/GaP
P (nm)
(nm)
IV-M
LFD3A54/R1-XX
Orange Common Anode
635
45
1.7
2.1 2.6
0.5 1.0
2:1
LFD3A64/R1-XX
Note : 1.The forward voltage data did not including 0.1V testing tolerance. 2. The luminous intensity data did not including 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD3A5/64/R1-XX Page 5/7
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio
Symbol Vf Iv
Unit volt mcd nm nm
Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V
p
Ir IV-M
A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD3A5/64/R1-XX Page6/7
Typical Electro-Optical Characteristics Curve
E CHIP
Fig.1 Forward current vs. Forward Voltage
1000
Fig.2 Relative Intensity vs. Forward Current
3.0
Forward Current(mA)
100
Relative Intensity Normalize @20mA
1.0 2.0 3.0 4.0 5.0
2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
10
1.0 0.1
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Forward Voltage@20mA Normalize @25
Relative Intensity@20mA Normalize @25
1.1
2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.0
0.9
0.8 -40 -20 0 20 40 60 80 100
Ambient Temperature()
Ambient Temperature()
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 550 600 650 700 750
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD3A5/64/R1-XX Page 7/7
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 5 2.RH=90 %~95% 3.t=240hrs 2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 5&-405 (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 5 2.Dwell time= 10 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 5 2.Dwell time=5 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

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